Modelling of On Current In a Scaled MOSFET Considering the Effect of Saturation Velocity and Temperature

The metal oxide semiconductor field effect transistor is the building block of VLSI(Very Large Scale Industry).Minimum featrure size of the ICs has shurnk consideably over the time of several decades. This results in a chip with the same functionality in a smaller area, or chips with more functionality in the same area.As a consequence,the number of transistor has increased over time. When gatelength is scaled into nanoscale , second order effects are becoming a dominant issue to be dealt with in transistor design. In fact, over the past 30 years the number of transistors per chip has been doubled every 2–3 years once a new technology node is introduced. Accurate description of temperature effects in a device is necessary for a circuit level MOSFET model to predict circuit behaviours over a range of temperature. This paper analysis the limiting effects of saturation velocity on drain current and scaling of the on-current temperature effects in MOSFET devices.It is concluded that temperature dependence decreases with technology scaling. Key word:VLSI.MOBILITY.VELOCITYSATURATION , MOSFET,SCE,DIBL,CLM,SOE.